Atomistic simulation of epitaxial Si film growth on Si (001) surface
The purpose of this thesis is to study the effect of conditions such as substrate orientation, process temperature, atomic beam energy, thermal dissipation rate and deposition rate on the energetic and microstructure of epitaxial growth of silicon on Si (001) surface.
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| 語言: | English |
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2008
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| 在線閱讀: | http://hdl.handle.net/10356/5130 |
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| 機構: | Nanyang Technological University |
| 語言: | English |
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sg-ntu-dr.10356-51302023-03-04T16:32:05Z Atomistic simulation of epitaxial Si film growth on Si (001) surface Xie, Xuepeng. School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films The purpose of this thesis is to study the effect of conditions such as substrate orientation, process temperature, atomic beam energy, thermal dissipation rate and deposition rate on the energetic and microstructure of epitaxial growth of silicon on Si (001) surface. Master of Engineering (MSE) 2008-09-17T10:20:46Z 2008-09-17T10:20:46Z 2001 2001 Thesis http://hdl.handle.net/10356/5130 en Nanyang Technological University 102 p. application/pdf |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NTU Library |
| collection |
DR-NTU |
| language |
English |
| topic |
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| spellingShingle |
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Xie, Xuepeng. Atomistic simulation of epitaxial Si film growth on Si (001) surface |
| description |
The purpose of this thesis is to study the effect of conditions such as substrate orientation, process temperature, atomic beam energy, thermal dissipation rate and deposition rate on the energetic and microstructure of epitaxial growth of silicon on Si (001) surface. |
| author2 |
School of Materials Science & Engineering |
| author_facet |
School of Materials Science & Engineering Xie, Xuepeng. |
| format |
Theses and Dissertations |
| author |
Xie, Xuepeng. |
| author_sort |
Xie, Xuepeng. |
| title |
Atomistic simulation of epitaxial Si film growth on Si (001) surface |
| title_short |
Atomistic simulation of epitaxial Si film growth on Si (001) surface |
| title_full |
Atomistic simulation of epitaxial Si film growth on Si (001) surface |
| title_fullStr |
Atomistic simulation of epitaxial Si film growth on Si (001) surface |
| title_full_unstemmed |
Atomistic simulation of epitaxial Si film growth on Si (001) surface |
| title_sort |
atomistic simulation of epitaxial si film growth on si (001) surface |
| publishDate |
2008 |
| url |
http://hdl.handle.net/10356/5130 |
| _version_ |
1759854946168078336 |