Organic ferroelectric memory devices based on resistive switching
The non-volatile functionality in ferroelectric memories arises from the inherently stable and well-defined physical phenomenon of ferroelectric polarization. Consequently it is anticipated to be of excellent qualities. Nevertheless, several unaddressed issues have undermined its full potential. The...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2013
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| Online Access: | http://hdl.handle.net/10356/52948 |
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| Institution: | Nanyang Technological University |
| Language: | English |
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