Structural and electrical characterization of GaN based hetero-structures

• 主要作者: Agarwal, Ananya
• 其他作者: K Radhakrishnan
• 格式: Final Year Project
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: http://hdl.handle.net/10356/53109

The thesis discusses about the structural and electrical properties of GaN based materials. The literature review covers basic concepts of GaN materials and high electron mobility transistors (HEMTs). In particular, detailed explanation on the polarization charges that are present in AlGaN/GaN HEMT...