Schottky barrier engineering on dopant-segregated schottky silicon nanowire MOSFETs

• المؤلف الرئيسي: Chin, Yoke King
• مؤلفون آخرون: Pey Kin Leong
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/53206

Silicon nanowire with Gate-All-Around architecture is considered as one of the most promising candidates for CMOS scaling beyond 11 nm technology node due to its superior gate to channel electrostatic control. However, due to the one dimensional nature of nanowire, the resistance at the nanowire sou...