Raman spectroscopy characterization of carbon thin films

• Main Author: Lim, Yaw Keong.
• Other Authors: Tay Beng Kang
• Format: Final Year Project
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/53367
• Institution: Nanyang Technological University

It is an essential to characterise the carbon samples as a start up for further research on the thermal conductivity of these carbon samples. As this will reduces the time of finding out the details of the Raman Spectrum of the carbon thin film. All the amorphous carbon thin films were grown using Filtered Cathodic Vacuum Arc (FCVA) with different deposition parameters, which will then be characterise using Raman Spectroscopy. It is observed that, with increase of substrate voltage whether in dc or ac, the intensity of the D peak also increases, as more defects were introduced. The value of Full Wave Half Maximum (FWHM) of the D and G peak reduces as temperature increases from 300°C to 600°C with constant biasing voltage is much obvious than temperature at 10°C to 25°C. In order to obtain more details about the Raman Spectrum of the carbon thin films, all the Raman Spectrums were curved fitted with Lorentzian fit for D peak and BWF fit for G peak. This data enable identifying of the actual hybridization of the carbon thin film by using the Three Stage Model which was suggested by Ferrari and Roberston. Besides that, the uniformity of the carbon thin film was able to be determined by the use of Raman Spectroscopy scanning at different point of the x and y position and observing the intensity of the Raman spectrum where z position is constant. Although the intensity at different point is observed, it does not change the structure of the carbon thin film.