Design and fabrication of zinc oxide multilayers light emitting devices

Zinc Oxide (ZnO) exhibits a wide band-gap of ~3.4eV and a large exciton binding energy of ~60meV. ZnO has shown a large potential in the development of Ultraviolet (UV) light emitting devices, operating at room temperature. However, the crystal structure of ZnO has hindered its advancement in UV con...

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Main Author: Tsang, Tony Siu Hou
Other Authors: Yu Siu Fung
Format: Theses and Dissertations
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/53751
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-537512023-07-04T16:17:31Z Design and fabrication of zinc oxide multilayers light emitting devices Tsang, Tony Siu Hou Yu Siu Fung School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Zinc Oxide (ZnO) exhibits a wide band-gap of ~3.4eV and a large exciton binding energy of ~60meV. ZnO has shown a large potential in the development of Ultraviolet (UV) light emitting devices, operating at room temperature. However, the crystal structure of ZnO has hindered its advancement in UV conventional lasers due to the difficulty in facet-cleaving, results in large scattering loss and high laser threshold. DOCTOR OF PHILOSOPHY (EEE) 2013-06-07T03:38:19Z 2013-06-07T03:38:19Z 2011 2011 Thesis Tsang, T. S. H. (2011). Design and fabrication of zinc oxide multilayers light emitting devices. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/53751 10.32657/10356/53751 en 166 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Tsang, Tony Siu Hou
Design and fabrication of zinc oxide multilayers light emitting devices
description Zinc Oxide (ZnO) exhibits a wide band-gap of ~3.4eV and a large exciton binding energy of ~60meV. ZnO has shown a large potential in the development of Ultraviolet (UV) light emitting devices, operating at room temperature. However, the crystal structure of ZnO has hindered its advancement in UV conventional lasers due to the difficulty in facet-cleaving, results in large scattering loss and high laser threshold.
author2 Yu Siu Fung
author_facet Yu Siu Fung
Tsang, Tony Siu Hou
format Theses and Dissertations
author Tsang, Tony Siu Hou
author_sort Tsang, Tony Siu Hou
title Design and fabrication of zinc oxide multilayers light emitting devices
title_short Design and fabrication of zinc oxide multilayers light emitting devices
title_full Design and fabrication of zinc oxide multilayers light emitting devices
title_fullStr Design and fabrication of zinc oxide multilayers light emitting devices
title_full_unstemmed Design and fabrication of zinc oxide multilayers light emitting devices
title_sort design and fabrication of zinc oxide multilayers light emitting devices
publishDate 2013
url https://hdl.handle.net/10356/53751
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