Study of low temperature plasma activated wafer bonding

A 2-inch GaAs and Si were bonded via Argon (Ar) plasma activation. The effects brought by plasma parameters of exposure time, pressure and radio-frequency (RF) power were investigated through statistical means and characterization tools such as Atomic Force Microscopy (AFM) and Video Contact Angle S...

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Main Author: Yeo, Thomas Peng Siong.
Other Authors: Yoon Soon Fatt
Format: Final Year Project
Language:English
Published: 2013
Subjects:
Online Access:http://hdl.handle.net/10356/54210
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-542102023-07-07T15:52:21Z Study of low temperature plasma activated wafer bonding Yeo, Thomas Peng Siong. Yoon Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Semiconductors A 2-inch GaAs and Si were bonded via Argon (Ar) plasma activation. The effects brought by plasma parameters of exposure time, pressure and radio-frequency (RF) power were investigated through statistical means and characterization tools such as Atomic Force Microscopy (AFM) and Video Contact Angle System (VCA). RF power was found to have the largest influences on the bond energy. The highest specific bond energy is associated with 30 s, 120 mT and 200 W plasma conditions and 140 oC low temperature anneal was 424 mJ/m2. Through the present work, it may serve to integrate a III/V compound material to Si to demonstrate the simplicity in monolithic integration through which processed CMOS Si wafer could be combined with photoelectronics III-V compounds on a standalone platform. Bachelor of Engineering 2013-06-14T08:40:45Z 2013-06-14T08:40:45Z 2013 2013 Final Year Project (FYP) http://hdl.handle.net/10356/54210 en Nanyang Technological University 70 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Yeo, Thomas Peng Siong.
Study of low temperature plasma activated wafer bonding
description A 2-inch GaAs and Si were bonded via Argon (Ar) plasma activation. The effects brought by plasma parameters of exposure time, pressure and radio-frequency (RF) power were investigated through statistical means and characterization tools such as Atomic Force Microscopy (AFM) and Video Contact Angle System (VCA). RF power was found to have the largest influences on the bond energy. The highest specific bond energy is associated with 30 s, 120 mT and 200 W plasma conditions and 140 oC low temperature anneal was 424 mJ/m2. Through the present work, it may serve to integrate a III/V compound material to Si to demonstrate the simplicity in monolithic integration through which processed CMOS Si wafer could be combined with photoelectronics III-V compounds on a standalone platform.
author2 Yoon Soon Fatt
author_facet Yoon Soon Fatt
Yeo, Thomas Peng Siong.
format Final Year Project
author Yeo, Thomas Peng Siong.
author_sort Yeo, Thomas Peng Siong.
title Study of low temperature plasma activated wafer bonding
title_short Study of low temperature plasma activated wafer bonding
title_full Study of low temperature plasma activated wafer bonding
title_fullStr Study of low temperature plasma activated wafer bonding
title_full_unstemmed Study of low temperature plasma activated wafer bonding
title_sort study of low temperature plasma activated wafer bonding
publishDate 2013
url http://hdl.handle.net/10356/54210
_version_ 1772825443214295040