Study of low temperature plasma activated wafer bonding
A 2-inch GaAs and Si were bonded via Argon (Ar) plasma activation. The effects brought by plasma parameters of exposure time, pressure and radio-frequency (RF) power were investigated through statistical means and characterization tools such as Atomic Force Microscopy (AFM) and Video Contact Angle S...
Saved in:
Main Author: | |
---|---|
Other Authors: | |
Format: | Final Year Project |
Language: | English |
Published: |
2013
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/54210 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
id |
sg-ntu-dr.10356-54210 |
---|---|
record_format |
dspace |
spelling |
sg-ntu-dr.10356-542102023-07-07T15:52:21Z Study of low temperature plasma activated wafer bonding Yeo, Thomas Peng Siong. Yoon Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Semiconductors A 2-inch GaAs and Si were bonded via Argon (Ar) plasma activation. The effects brought by plasma parameters of exposure time, pressure and radio-frequency (RF) power were investigated through statistical means and characterization tools such as Atomic Force Microscopy (AFM) and Video Contact Angle System (VCA). RF power was found to have the largest influences on the bond energy. The highest specific bond energy is associated with 30 s, 120 mT and 200 W plasma conditions and 140 oC low temperature anneal was 424 mJ/m2. Through the present work, it may serve to integrate a III/V compound material to Si to demonstrate the simplicity in monolithic integration through which processed CMOS Si wafer could be combined with photoelectronics III-V compounds on a standalone platform. Bachelor of Engineering 2013-06-14T08:40:45Z 2013-06-14T08:40:45Z 2013 2013 Final Year Project (FYP) http://hdl.handle.net/10356/54210 en Nanyang Technological University 70 p. application/pdf |
institution |
Nanyang Technological University |
building |
NTU Library |
continent |
Asia |
country |
Singapore Singapore |
content_provider |
NTU Library |
collection |
DR-NTU |
language |
English |
topic |
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
spellingShingle |
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Yeo, Thomas Peng Siong. Study of low temperature plasma activated wafer bonding |
description |
A 2-inch GaAs and Si were bonded via Argon (Ar) plasma activation. The effects brought by plasma parameters of exposure time, pressure and radio-frequency (RF) power were investigated through statistical means and characterization tools such as Atomic Force Microscopy (AFM) and Video Contact Angle System (VCA). RF power was found to have the largest influences on the bond energy. The highest specific bond energy is associated with 30 s, 120 mT and 200 W plasma conditions and 140 oC low temperature anneal was 424 mJ/m2. Through the present work, it may serve to integrate a III/V compound material to Si to demonstrate the simplicity in monolithic integration through which processed CMOS Si wafer could be combined with photoelectronics III-V compounds on a standalone platform. |
author2 |
Yoon Soon Fatt |
author_facet |
Yoon Soon Fatt Yeo, Thomas Peng Siong. |
format |
Final Year Project |
author |
Yeo, Thomas Peng Siong. |
author_sort |
Yeo, Thomas Peng Siong. |
title |
Study of low temperature plasma activated wafer bonding |
title_short |
Study of low temperature plasma activated wafer bonding |
title_full |
Study of low temperature plasma activated wafer bonding |
title_fullStr |
Study of low temperature plasma activated wafer bonding |
title_full_unstemmed |
Study of low temperature plasma activated wafer bonding |
title_sort |
study of low temperature plasma activated wafer bonding |
publishDate |
2013 |
url |
http://hdl.handle.net/10356/54210 |
_version_ |
1772825443214295040 |