Study of low temperature plasma activated wafer bonding

A 2-inch GaAs and Si were bonded via Argon (Ar) plasma activation. The effects brought by plasma parameters of exposure time, pressure and radio-frequency (RF) power were investigated through statistical means and characterization tools such as Atomic Force Microscopy (AFM) and Video Contact Angle S...

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書目詳細資料
主要作者: Yeo, Thomas Peng Siong.
其他作者: Yoon Soon Fatt
格式: Final Year Project
語言:English
出版: 2013
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在線閱讀:http://hdl.handle.net/10356/54210
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