Study of low temperature plasma activated wafer bonding

A 2-inch GaAs and Si were bonded via Argon (Ar) plasma activation. The effects brought by plasma parameters of exposure time, pressure and radio-frequency (RF) power were investigated through statistical means and characterization tools such as Atomic Force Microscopy (AFM) and Video Contact Angle S...

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Bibliographic Details
Main Author: Yeo, Thomas Peng Siong.
Other Authors: Yoon Soon Fatt
Format: Final Year Project
Language:English
Published: 2013
Subjects:
Online Access:http://hdl.handle.net/10356/54210
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Institution: Nanyang Technological University
Language: English
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