Copper wire bond crack characterization after temperature cycling and correlation with accelerated test (thermal shock)

• Main Author: Liew, Li Ping.
• Other Authors: Tan Cher Ming
• Format: Final Year Project
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/54445
• Institution: Nanyang Technological University

There are more than 8 to 9 billion wires bonded every year on average in the planet and more than 160 billion Integrated Chips (ICs) produced went through wire bonding process. With the increased use of wire bonding and extensive infrastructure for chipinterconnection on wire bonding, more and more industries are driving wire bonding technology toward increasing yields, decreasing pitches and lowest possible and ever decreasing cost. The need for reliability in wire bonding is a necessary step in order to understand how the degradation of wire bonding that leads to the breaking of wires. This study involved two types of stress test conditions, temperature cycle and thermal shock. These two types of stress tests will be analysed to find the correlation and failure analysis to understand the degradation of the copper wire bonding. In this report, it also includes a methodology of measuring the currents and voltages to find the resistance changes and thus by identifying the resistance changes, the degradation on the wire bonding can be observed.