Future oxide-based resistive flash memories

• 主要作者: Wu, Wenze.
• 其他作者: Ang Diing Shenp
• 格式: Final Year Project
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: http://hdl.handle.net/10356/54465
• 機構: Nanyang Technological University

DRAM, the type of memory cell widely used for high density high speed system memory, faces uncertainty in continued scaling for increased density and performance. Amongst emerging alternative technologies, Resistive Random Access Memory (RRAM) with its high speed and ability to scale further downwar...