Future oxide-based resistive flash memories

• Main Author: Wu, Wenze.
• Other Authors: Ang Diing Shenp
• Format: Final Year Project
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/54465
• Institution: Nanyang Technological University

DRAM, the type of memory cell widely used for high density high speed system memory, faces uncertainty in continued scaling for increased density and performance. Amongst emerging alternative technologies, Resistive Random Access Memory (RRAM) with its high speed and ability to scale further downwar...