CMOS friendly electrode material screening for HfOx-based RRAM

• Main Author: Yan, Haiping
• Other Authors: Goh Wang Ling
• Format: Final Year Project
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/54499
• Institution: Nanyang Technological University

This project is aim to study the Resistive Radom-Access Memory (RRAM), which is expected to be the replacement of flash memory and a next generation memory. RRAM device has the advantages of high scalability, simple structure, low power consumption and fast speed. This emerging memory technology attracts a lot of attention. During this project, after reviewing the literature of RRAM device’s switching behaviour and driving mechanisms, three wafer groups of HfOx based RRAM devices with CMOS friendly electrode materials (like Ti, TiN, Al, Ni, etc) have been tested for analysis and comparisons. It is expected to understand how the composition of dielectric and electrodes can impact on RRAM device performance. An auto-mapping test methodology is designed to progress the devices testing smoothly. In addition, the MATLAB code is written to process the raw data, since MATLAB has powerful capabilities of number analysis, matrix calculation and scientific data visualization.