CMOS friendly electrode material screening for HfOx-based RRAM

• Main Author: Yan, Haiping
• Other Authors: Goh Wang Ling
• Format: Final Year Project
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/54499
• Institution: Nanyang Technological University

This project is aim to study the Resistive Radom-Access Memory (RRAM), which is expected to be the replacement of flash memory and a next generation memory. RRAM device has the advantages of high scalability, simple structure, low power consumption and fast speed. This emerging memory technology att...