Nonvolatile resistive switching in metal oxides for the application in resistive random access memory

• 主要作者: Peng, Haiyang
• 其他作者: Wu Tao, Tom
• 格式: Theses and Dissertations
• 語言: English
• 出版: 2014
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• 在線閱讀: https://hdl.handle.net/10356/55364

Resistive random access memory (ReRAM or memristor) based on the resistive switching (RS) has been proposed as a potential candidate for next generation nonvolatile memory with high density, fast write and erase access, low power operation, and excellent retention performance. Although most of the t...