Nonvolatile resistive switching in metal oxides for the application in resistive random access memory

• Main Author: Peng, Haiyang
• Other Authors: Wu Tao, Tom
• Format: Theses and Dissertations
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: https://hdl.handle.net/10356/55364
• Institution: Nanyang Technological University

Resistive random access memory (ReRAM or memristor) based on the resistive switching (RS) has been proposed as a potential candidate for next generation nonvolatile memory with high density, fast write and erase access, low power operation, and excellent retention performance. Although most of the t...