Molecular beam epitaxy of dilute nitride indium antimonide materials for long wavelength infrared application
InSb is an important material for high frequency electronic devices and for mid-infrared radiation detection. By adding a small amount of N into InSb, the band gap is found to decrease and this is useful for long wavelength infrared detector application. The main objectives of this thesis are to inv...
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| 格式: | Theses and Dissertations |
| 語言: | English |
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2014
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| 在線閱讀: | http://hdl.handle.net/10356/60681 |
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