Molecular beam epitaxy of dilute nitride indium antimonide materials for long wavelength infrared application
InSb is an important material for high frequency electronic devices and for mid-infrared radiation detection. By adding a small amount of N into InSb, the band gap is found to decrease and this is useful for long wavelength infrared detector application. The main objectives of this thesis are to inv...
Saved in:
Main Author: | Pham, Huynh Tram |
---|---|
Other Authors: | Yoon Soon Fatt |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2014
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/60681 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Dilute antimonide nitride for long wavelength infrared photodetection
by: Chen, X. Z., et al.
Published: (2014) -
A study of dilute nitride-antimonide semiconductors for near infrared optoelectronics devices
by: Tan, Kian Hua
Published: (2010) -
Epitaxial indium antimonide for multiband photodetection from IR to millimeter/terahertz wave
by: Tong, Jinchao, et al.
Published: (2022) -
Photoluminescence blueshift mechanisms in molecular beam epitaxy grown dilute nitride hetrostructures
by: VIVEK DIXIT
Published: (2010) -
A study of dilute nitride compounds grown by molecular beam epitaxy for electronic application
by: Xie, Shiyong
Published: (2010)