Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy

Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors: Chua, S.-J., Zhang, Z.-H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
AlInGaAs
Incorporation coefficient
MBE
Quantum well
TEM
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80592
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/80592

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