Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Main Authors:	Chua, S.-J., Zhang, Z.-H.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	AlInGaAs Incorporation coefficient MBE Quantum well TEM
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80592
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-80592
record_format	dspace
spelling	sg-nus-scholar.10635-805922015-01-06T13:04:02Z Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy Chua, S.-J. Zhang, Z.-H. ELECTRICAL ENGINEERING AlInGaAs Incorporation coefficient MBE Quantum well TEM Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 37 6 A 3280-3281 JAPND 2014-10-07T02:59:12Z 2014-10-07T02:59:12Z 1998-06 Article Chua, S.-J.,Zhang, Z.-H. (1998-06). Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 37 (6 A) : 3280-3281. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/80592 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
topic	AlInGaAs Incorporation coefficient MBE Quantum well TEM
spellingShingle	AlInGaAs Incorporation coefficient MBE Quantum well TEM Chua, S.-J. Zhang, Z.-H. Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy
description	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Chua, S.-J. Zhang, Z.-H.
format	Article
author	Chua, S.-J. Zhang, Z.-H.
author_sort	Chua, S.-J.
title	Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy
title_short	Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy
title_full	Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy
title_fullStr	Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy
title_full_unstemmed	Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy
title_sort	indium incorporation coefficients in the growth of alingaas/al0.3ga0.7as quantum wells by molecular beam epitaxy
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80592
_version_	1681088916281622528

Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy

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