Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors: Chua, S.-J., Zhang, Z.-H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
MBE
TEM
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80592
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-805922015-01-06T13:04:02Z Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy Chua, S.-J. Zhang, Z.-H. ELECTRICAL ENGINEERING AlInGaAs Incorporation coefficient MBE Quantum well TEM Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 37 6 A 3280-3281 JAPND 2014-10-07T02:59:12Z 2014-10-07T02:59:12Z 1998-06 Article Chua, S.-J.,Zhang, Z.-H. (1998-06). Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 37 (6 A) : 3280-3281. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/80592 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
topic AlInGaAs
Incorporation coefficient
MBE
Quantum well
TEM
spellingShingle AlInGaAs
Incorporation coefficient
MBE
Quantum well
TEM
Chua, S.-J.
Zhang, Z.-H.
Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy
description Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Chua, S.-J.
Zhang, Z.-H.
format Article
author Chua, S.-J.
Zhang, Z.-H.
author_sort Chua, S.-J.
title Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy
title_short Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy
title_full Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy
title_fullStr Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy
title_full_unstemmed Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy
title_sort indium incorporation coefficients in the growth of alingaas/al0.3ga0.7as quantum wells by molecular beam epitaxy
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/80592
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