Study of single crystal diamond schottky barrier diodes for power electronics applications

• Main Author: Arie Nawawi
• Other Authors: Tseng King Jet
• Format: Theses and Dissertations
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors; DRNTU::Engineering::Electrical and electronic engineering::Power electronics; DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: https://hdl.handle.net/10356/61611
• Institution: Nanyang Technological University

Diamond as wide band-gap material is promising for high-voltage, high-power, high-frequency, and high-temperature devices due to its superior properties: high maximum electric-field (10-20 MV/cm), electron-mobility (4500 cm2.V-1.s-1) and hole-mobility (3800 cm2.V-1.s-1), saturation velocity (2.7x107 cm/s), and thermal conductivity (22-24 W/cm.K). This thesis focuses on the development, characterizations, analysis, modeling and simulations, and design optimizations of diamond Schottky barrier diode (SBD) for power electronics applications. Throughout the study, several p-type vertical diamond SBDs with Molybdenum Schottky contacts and different specifications have been fabricated and measured. Static and transient characteristics of the diamond SBDs at different temperatures were investigated based on the experimental results, theoretical considerations, and numerical simulations using finite-element physics-based Technology-Computer-Aided-Design (TCAD) Sentaurus software. The non-ideal behaviours of the experimental SBDs were analyzed and simulated based on the metal-interfacial layer-semiconductor model. Furthermore, investigations and design optimizations of the edge termination structures for diamond power SBD utilizing high-k oxide were presented.