Study of single crystal diamond schottky barrier diodes for power electronics applications

• 主要作者: Arie Nawawi
• 其他作者: Tseng King Jet
• 格式: Theses and Dissertations
• 語言: English
• 出版: 2014
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors; DRNTU::Engineering::Electrical and electronic engineering::Power electronics; DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• 在線閱讀: https://hdl.handle.net/10356/61611
• 機構: Nanyang Technological University

Diamond as wide band-gap material is promising for high-voltage, high-power, high-frequency, and high-temperature devices due to its superior properties: high maximum electric-field (10-20 MV/cm), electron-mobility (4500 cm2.V-1.s-1) and hole-mobility (3800 cm2.V-1.s-1), saturation velocity (2.7x107...