Oxide based non-volatile resistance random access memory

• المؤلف الرئيسي: Zheng, Ke
• مؤلفون آخرون: Sun Xiaowei
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/62260

As one of the potential candidates for next generation non-volatile memory, resistance random access memory (RRAM) has attracted great attention recently. The study of resistive switching (RS) phenomenon could retrospect from 1960s and in nowadays various materials and structures have been gradually...