Oxide based non-volatile resistance random access memory

• Main Author: Zheng, Ke
• Other Authors: Sun Xiaowei
• Format: Theses and Dissertations
• Language: English
• Published: 2015
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/62260
• Institution: Nanyang Technological University

As one of the potential candidates for next generation non-volatile memory, resistance random access memory (RRAM) has attracted great attention recently. The study of resistive switching (RS) phenomenon could retrospect from 1960s and in nowadays various materials and structures have been gradually...