Oxide based non-volatile resistance random access memory
As one of the potential candidates for next generation non-volatile memory, resistance random access memory (RRAM) has attracted great attention recently. The study of resistive switching (RS) phenomenon could retrospect from 1960s and in nowadays various materials and structures have been gradually...
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2015
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/62260 |
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