Transparent conductive thin film

Transparent conductive thin film

Gallium Zinc oxide film was fabricated via sol-gel spin coating technique. The concentration of gallium was varied from 0 to 5at% to determine the optimal amount of with respect to sheet resistance. Even though the addition of gallium in zinc oxide is to improve the sheet resistance of the transp...

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Bibliographic Details
Main Author: Seah, Jireh
Other Authors: Tang Xiaohong
Format: Final Year Project
Language:English
Published: 2016
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:http://hdl.handle.net/10356/67948
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Institution: Nanyang Technological University
Language: English
Description
Summary:Gallium Zinc oxide film was fabricated via sol-gel spin coating technique. The concentration of gallium was varied from 0 to 5at% to determine the optimal amount of with respect to sheet resistance. Even though the addition of gallium in zinc oxide is to improve the sheet resistance of the transparent conducting film, too much gallium would result in negative effects of the film with annealing temperature was also taken into account. The GZO films were then annealed in ambient air in a furnace at 500˚C for 1 hour. All samples yield an average of 80% and above optical transparency.

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