Novel high-k dielectrics for nanoelectronics

The aggressive downsizing in metal-oxide-semiconductor field effect transistors (MOSFET) has been the driving force for performance progress in microelectronics. In association with device parameters related to MOSFET, SiO2 based oxide has already faced to its limit in further thinning due to excess...

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書目詳細資料
主要作者: Chong, Vanessa Meng Meng
其他作者: Alfred Tok Iing Yoong
格式: Theses and Dissertations
語言:English
出版: 2016
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在線閱讀:https://hdl.handle.net/10356/68931
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