Novel high-k dielectrics for nanoelectronics
The aggressive downsizing in metal-oxide-semiconductor field effect transistors (MOSFET) has been the driving force for performance progress in microelectronics. In association with device parameters related to MOSFET, SiO2 based oxide has already faced to its limit in further thinning due to excess...
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格式: | Theses and Dissertations |
語言: | English |
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2016
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在線閱讀: | https://hdl.handle.net/10356/68931 |
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