Novel high-k dielectrics for nanoelectronics
The aggressive downsizing in metal-oxide-semiconductor field effect transistors (MOSFET) has been the driving force for performance progress in microelectronics. In association with device parameters related to MOSFET, SiO2 based oxide has already faced to its limit in further thinning due to excess...
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Main Author: | Chong, Vanessa Meng Meng |
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Other Authors: | Alfred Tok Iing Yoong |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2016
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/68931 |
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Institution: | Nanyang Technological University |
Language: | English |
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