Novel high-k dielectrics for nanoelectronics

The aggressive downsizing in metal-oxide-semiconductor field effect transistors (MOSFET) has been the driving force for performance progress in microelectronics. In association with device parameters related to MOSFET, SiO2 based oxide has already faced to its limit in further thinning due to excess...

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Bibliographic Details
Main Author: Chong, Vanessa Meng Meng
Other Authors: Alfred Tok Iing Yoong
Format: Theses and Dissertations
Language:English
Published: 2016
Subjects:
Online Access:https://hdl.handle.net/10356/68931
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Institution: Nanyang Technological University
Language: English

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