Novel high-k dielectrics for nanoelectronics

• المؤلف الرئيسي: Chong, Vanessa Meng Meng
• مؤلفون آخرون: Alfred Tok Iing Yoong
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2016
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects; DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films; DRNTU::Engineering::Nanotechnology
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/68931

The aggressive downsizing in metal-oxide-semiconductor field effect transistors (MOSFET) has been the driving force for performance progress in microelectronics. In association with device parameters related to MOSFET, SiO2 based oxide has already faced to its limit in further thinning due to excess...