Study of sputtered tin schottky barrier diode for Gan-hemt applications

• المؤلف الرئيسي: Li, Kang
• مؤلفون آخرون: Ng Geok Ing
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2016
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/68961
• المؤسسة: Nanyang Technological University

During the past two decades, GaN-based high electron mobility transistor (HEMT) has been identified to be a very promising transistor that is able to realize the applications of high voltage, high frequency, and high temperature and has drawn much research interest around the world. More recently, G...