Study of sputtered tin schottky barrier diode for Gan-hemt applications
During the past two decades, GaN-based high electron mobility transistor (HEMT) has been identified to be a very promising transistor that is able to realize the applications of high voltage, high frequency, and high temperature and has drawn much research interest around the world. More recently, G...
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2016
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| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/68961 |
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| 機構: | Nanyang Technological University |
| 語言: | English |