Investigation of tradeoff between switching loss and EMI issue of gate driver with ferrite bead for SiC power module

• Main Author: Liu, Dongjie
• Other Authors: Tang Yi
• Format: Final Year Project
• Language: English
• Published: 2016
• Subjects: DRNTU::Engineering
• Online Access: http://hdl.handle.net/10356/69348
• Institution: Nanyang Technological University

It is well-known that gate driver design is a trade-off between switching loss and EMI issue. To maximize the high-efficiency, high-frequency benefits of SiC power devices, they need to be driven at high switching speed. However, the increasing dv/dt and di/dt ratios will tend to deteriorate this ki...