Compact modeling for GaN HEMT devices

• المؤلف الرئيسي: Binit Syamal
• مؤلفون آخرون: Zhou Xing
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2017
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/70216
• المؤسسة: Nanyang Technological University

This thesis presents a compact model developed for generic High Electron Mobility Transistors (HEMTs). The model is based on unified regional modeling (URM) of the 2-dimensional electron gas (2-DEG) charge density, including the two lowest sub-bands of the triangular well in the strong inversion...