Compact modeling for GaN HEMT devices

• 主要作者: Binit Syamal
• 其他作者: Zhou Xing
• 格式: Theses and Dissertations
• 語言: English
• 出版: 2017
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: http://hdl.handle.net/10356/70216
• 機構: Nanyang Technological University

This thesis presents a compact model developed for generic High Electron Mobility Transistors (HEMTs). The model is based on unified regional modeling (URM) of the 2-dimensional electron gas (2-DEG) charge density, including the two lowest sub-bands of the triangular well in the strong inversion...