Characterization and analysis of AlGaN/GaN HEMTs on Si for high frequency application

AlGaN/GaN HEMTs are perfect candidates for high-frequency, high-voltage and high-power applications such as radar and wireless communication systems, DC-DC convertors, as well as cellular base stations. Intrinsic material parameters, which will be further elaborated in the report, allow it to be eff...

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書目詳細資料
主要作者: Pang, Vanessa Du Juan
其他作者: Ng Geok Ing
格式: Final Year Project
語言:English
出版: 2017
主題:
在線閱讀:http://hdl.handle.net/10356/70692
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