Characterization and analysis of AlGaN/GaN HEMTs on Si for high frequency application

• المؤلف الرئيسي: Pang, Vanessa Du Juan
• مؤلفون آخرون: Ng Geok Ing
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2017
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/70692

AlGaN/GaN HEMTs are perfect candidates for high-frequency, high-voltage and high-power applications such as radar and wireless communication systems, DC-DC convertors, as well as cellular base stations. Intrinsic material parameters, which will be further elaborated in the report, allow it to be eff...