Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um

GaAs-based laser diode with emission wavelength of 1.55um are highly demand due to their potential applications in optical fiber communication. We will use k.p method to calculate the energy level and optical transition to design a 1.55um GaAsNBi/GaAs quantum well laser diodes. The N and Bi composit...

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Main Author: Chen, Ruiming
Other Authors: Fan Weijun
Format: Final Year Project
Language:English
Published: 2017
Subjects:
Online Access:http://hdl.handle.net/10356/70842
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-708422023-07-07T15:42:47Z Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um Chen, Ruiming Fan Weijun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering GaAs-based laser diode with emission wavelength of 1.55um are highly demand due to their potential applications in optical fiber communication. We will use k.p method to calculate the energy level and optical transition to design a 1.55um GaAsNBi/GaAs quantum well laser diodes. The N and Bi compositions and well width will be adjusted and optimized to meet the 1.55um wavelength requirement. Bachelor of Engineering 2017-05-11T08:39:49Z 2017-05-11T08:39:49Z 2017 Final Year Project (FYP) http://hdl.handle.net/10356/70842 en Nanyang Technological University 39 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Chen, Ruiming
Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um
description GaAs-based laser diode with emission wavelength of 1.55um are highly demand due to their potential applications in optical fiber communication. We will use k.p method to calculate the energy level and optical transition to design a 1.55um GaAsNBi/GaAs quantum well laser diodes. The N and Bi compositions and well width will be adjusted and optimized to meet the 1.55um wavelength requirement.
author2 Fan Weijun
author_facet Fan Weijun
Chen, Ruiming
format Final Year Project
author Chen, Ruiming
author_sort Chen, Ruiming
title Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um
title_short Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um
title_full Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um
title_fullStr Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um
title_full_unstemmed Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um
title_sort design of gaasnbi/gaas quantum well laser with emission wavelength of 1.55um
publishDate 2017
url http://hdl.handle.net/10356/70842
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