Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um
GaAs-based laser diode with emission wavelength of 1.55um are highly demand due to their potential applications in optical fiber communication. We will use k.p method to calculate the energy level and optical transition to design a 1.55um GaAsNBi/GaAs quantum well laser diodes. The N and Bi composit...
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| التنسيق: | Final Year Project |
| اللغة: | English |
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2017
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| الوصول للمادة أونلاين: | http://hdl.handle.net/10356/70842 |
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sg-ntu-dr.10356-708422023-07-07T15:42:47Z Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um Chen, Ruiming Fan Weijun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering GaAs-based laser diode with emission wavelength of 1.55um are highly demand due to their potential applications in optical fiber communication. We will use k.p method to calculate the energy level and optical transition to design a 1.55um GaAsNBi/GaAs quantum well laser diodes. The N and Bi compositions and well width will be adjusted and optimized to meet the 1.55um wavelength requirement. Bachelor of Engineering 2017-05-11T08:39:49Z 2017-05-11T08:39:49Z 2017 Final Year Project (FYP) http://hdl.handle.net/10356/70842 en Nanyang Technological University 39 p. application/pdf |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NTU Library |
| collection |
DR-NTU |
| language |
English |
| topic |
DRNTU::Engineering::Electrical and electronic engineering |
| spellingShingle |
DRNTU::Engineering::Electrical and electronic engineering Chen, Ruiming Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um |
| description |
GaAs-based laser diode with emission wavelength of 1.55um are highly demand due to their potential applications in optical fiber communication. We will use k.p method to calculate the energy level and optical transition to design a 1.55um GaAsNBi/GaAs quantum well laser diodes. The N and Bi compositions and well width will be adjusted and optimized to meet the 1.55um wavelength requirement. |
| author2 |
Fan Weijun |
| author_facet |
Fan Weijun Chen, Ruiming |
| format |
Final Year Project |
| author |
Chen, Ruiming |
| author_sort |
Chen, Ruiming |
| title |
Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um |
| title_short |
Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um |
| title_full |
Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um |
| title_fullStr |
Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um |
| title_full_unstemmed |
Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um |
| title_sort |
design of gaasnbi/gaas quantum well laser with emission wavelength of 1.55um |
| publishDate |
2017 |
| url |
http://hdl.handle.net/10356/70842 |
| _version_ |
1772827838368448512 |