Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um

• 主要作者: Chen, Ruiming
• 其他作者: Fan Weijun
• 格式: Final Year Project
• 語言: English
• 出版: 2017
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: http://hdl.handle.net/10356/70842
• 機構: Nanyang Technological University

GaAs-based laser diode with emission wavelength of 1.55um are highly demand due to their potential applications in optical fiber communication. We will use k.p method to calculate the energy level and optical transition to design a 1.55um GaAsNBi/GaAs quantum well laser diodes. The N and Bi composit...