Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um

• المؤلف الرئيسي: Chen, Ruiming
• مؤلفون آخرون: Fan Weijun
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2017
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/70842
• المؤسسة: Nanyang Technological University

GaAs-based laser diode with emission wavelength of 1.55um are highly demand due to their potential applications in optical fiber communication. We will use k.p method to calculate the energy level and optical transition to design a 1.55um GaAsNBi/GaAs quantum well laser diodes. The N and Bi composit...