Random telegraphic noise of decananometer transistors

• المؤلف الرئيسي: Chng, Joanna Yan Ting
• مؤلفون آخرون: Ang Diing Shenp
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2017
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/71885

There has always been an assumption that after voltage-accelerated stressing, the pre-existing or time-zero oxide traps would not be affect. However, this does not seem to hold true in the case of small area MOSFET. This study begins with an introduction to the fundamental understandings of a...