Random telegraphic noise of decananometer transistors

There has always been an assumption that after voltage-accelerated stressing, the pre-existing or time-zero oxide traps would not be affect. However, this does not seem to hold true in the case of small area MOSFET. This study begins with an introduction to the fundamental understandings of a...

全面介紹

Saved in:
書目詳細資料
主要作者: Chng, Joanna Yan Ting
其他作者: Ang Diing Shenp
格式: Final Year Project
語言:English
出版: 2017
主題:
在線閱讀:http://hdl.handle.net/10356/71885
標簽: 添加標簽
沒有標簽, 成為第一個標記此記錄!
機構: Nanyang Technological University
語言: English