Random telegraphic noise of decananometer transistors
There has always been an assumption that after voltage-accelerated stressing, the pre-existing or time-zero oxide traps would not be affect. However, this does not seem to hold true in the case of small area MOSFET. This study begins with an introduction to the fundamental understandings of a...
Saved in:
主要作者: | |
---|---|
其他作者: | |
格式: | Final Year Project |
語言: | English |
出版: |
2017
|
主題: | |
在線閱讀: | http://hdl.handle.net/10356/71885 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
機構: | Nanyang Technological University |
語言: | English |