Characterization of nanoscale conducting filament in high-k oxides by scanning tunneling microscopy and conductive atomic force microscopy

• Main Author: Zhou, Yu
• Other Authors: Ang Diing Shenp
• Format: Theses and Dissertations
• Language: English
• Published: 2017
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/72747
• Institution: Nanyang Technological University

By virtue of its simple structure, high operating speed and scalability, the resistive memory or RRAM is deemed a promising alternative to the charge-based memory, which is now facing severe scaling challenges. Of particular interest is the HfO2 RRAM due to its immediate compatibility with mainstrea...