Web based calculator for GeSiSn semiconductor band parameters

Elemental semiconductor band parameters such as lattice constant, band gap and inter-band values are published and readily available in the literature. However, calculation of band parameters for compound semiconductor can be tedious due to the existence of bowing parameter and temperature-dependent...

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Main Author: Htet, Myo Oo
Other Authors: Fan Weijun
Format: Final Year Project
Language:English
Published: 2019
Subjects:
Online Access:http://hdl.handle.net/10356/77432
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-774322023-07-07T15:55:37Z Web based calculator for GeSiSn semiconductor band parameters Htet, Myo Oo Fan Weijun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Elemental semiconductor band parameters such as lattice constant, band gap and inter-band values are published and readily available in the literature. However, calculation of band parameters for compound semiconductor can be tedious due to the existence of bowing parameter and temperature-dependent parameters. Therefore, deep understanding of the subject matter is required in order to calculate the band parameters accurately. The primary objective of this project is to develop a web based application for the calculation of Group IV compound semiconductors’ band parameters. As a secondary function, users will be able to download the result as text file for future reference. The implementation is through the use of web development tools such as JavaScript, CSS, HTML, JSP and Servlet. Integrated Development tool used in this project is Eclipse. Tomcat Server developed by the Apache Software Foundation is used as a Java Servlet Container. Hosting the web application is done in cloud computing platform offered by Amazon Web Services. Bachelor of Engineering (Electrical and Electronic Engineering) 2019-05-29T02:28:02Z 2019-05-29T02:28:02Z 2019 Final Year Project (FYP) http://hdl.handle.net/10356/77432 en Nanyang Technological University 76 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Htet, Myo Oo
Web based calculator for GeSiSn semiconductor band parameters
description Elemental semiconductor band parameters such as lattice constant, band gap and inter-band values are published and readily available in the literature. However, calculation of band parameters for compound semiconductor can be tedious due to the existence of bowing parameter and temperature-dependent parameters. Therefore, deep understanding of the subject matter is required in order to calculate the band parameters accurately. The primary objective of this project is to develop a web based application for the calculation of Group IV compound semiconductors’ band parameters. As a secondary function, users will be able to download the result as text file for future reference. The implementation is through the use of web development tools such as JavaScript, CSS, HTML, JSP and Servlet. Integrated Development tool used in this project is Eclipse. Tomcat Server developed by the Apache Software Foundation is used as a Java Servlet Container. Hosting the web application is done in cloud computing platform offered by Amazon Web Services.
author2 Fan Weijun
author_facet Fan Weijun
Htet, Myo Oo
format Final Year Project
author Htet, Myo Oo
author_sort Htet, Myo Oo
title Web based calculator for GeSiSn semiconductor band parameters
title_short Web based calculator for GeSiSn semiconductor band parameters
title_full Web based calculator for GeSiSn semiconductor band parameters
title_fullStr Web based calculator for GeSiSn semiconductor band parameters
title_full_unstemmed Web based calculator for GeSiSn semiconductor band parameters
title_sort web based calculator for gesisn semiconductor band parameters
publishDate 2019
url http://hdl.handle.net/10356/77432
_version_ 1772826700816580608