Web based calculator for GeSiSn semiconductor band parameters
Elemental semiconductor band parameters such as lattice constant, band gap and inter-band values are published and readily available in the literature. However, calculation of band parameters for compound semiconductor can be tedious due to the existence of bowing parameter and temperature-dependent...
Saved in:
Main Author: | Htet, Myo Oo |
---|---|
Other Authors: | Fan Weijun |
Format: | Final Year Project |
Language: | English |
Published: |
2019
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/77432 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application
by: Tan, Chuan Seng, et al.
Published: (2015) -
The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source
by: Chen, Qimiao, et al.
Published: (2020) -
Development of a graphical user interface to calculate semiconductor energy band diagrams
by: Yang, Ting
Published: (2020) -
Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials
by: An, Shu, et al.
Published: (2023) -
Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications
by: Ghosh, Soumava, et al.
Published: (2020)