Analysis of high power gallium nitride based high electron mobility transistors for next generation electronics applications

• Main Author: Vompolu, Ganesh Sampath
• Other Authors: Ng Geok Ing
• Format: Theses and Dissertations
• Language: English
• Published: 2019
• Subjects: Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/79010
• Institution: Nanyang Technological University

AlGaN/GaN high electron mobility transistors (HEMTs) are being widely investigated and increasingly considered as a promising device for the next generation of power electronics and microwave applications because of their key characteristics like high breakdown voltage, high power density and high t...