Ultrafast Electron and Hole Relaxation Pathways in Few-Layer MoS2

• المؤلفون الرئيسيون: Nie, Zhaogang, Long, Run, Teguh, Jefri S., Huang, Chung-Che, Hewak, Daniel W., Yeow, Edwin K. L., Shen, Zexiang, Prezhdo, Oleg V., Loh, Zhi-Heng
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Science::Chemistry
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/79259; http://hdl.handle.net/10220/38793

Femtosecond optical pump–probe spectroscopy is employed to elucidate the band-selective ultrafast carrier dynamics of few-layer MoS2. Following narrowband resonant photoexcitation of the exciton A transition, the subpicosecond to picosecond relaxation dynamics of the electron and the hole at the K v...