Ultrafast Electron and Hole Relaxation Pathways in Few-Layer MoS2

• Main Authors: Nie, Zhaogang, Long, Run, Teguh, Jefri S., Huang, Chung-Che, Hewak, Daniel W., Yeow, Edwin K. L., Shen, Zexiang, Prezhdo, Oleg V., Loh, Zhi-Heng
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2015
• Subjects: DRNTU::Science::Chemistry
• Online Access: https://hdl.handle.net/10356/79259; http://hdl.handle.net/10220/38793
• Institution: Nanyang Technological University

Femtosecond optical pump–probe spectroscopy is employed to elucidate the band-selective ultrafast carrier dynamics of few-layer MoS2. Following narrowband resonant photoexcitation of the exciton A transition, the subpicosecond to picosecond relaxation dynamics of the electron and the hole at the K v...