Statistical analysis and design of 6T SRAM cell for physical unclonable function with dual application modes

• Main Authors: Zhang, Le, Chang, Chip-Hong, Kong, Zhi Hui, Liu, Chao Qun
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2015
• Subjects: Electrical and Electronic Engineering
• Online Access: https://hdl.handle.net/10356/79333; http://hdl.handle.net/10220/38778
• Institution: Nanyang Technological University

Apart from performance and power efficiency, security is another critical concern in the modern memory sub-system design. SRAM, which is routinely used as a data preservation component, has now been developed into an effective primitive known as Physical Unclonable Function (PUF) for cryptographic k...