Highly Reliable Spin-Transfer Torque Magnetic RAM-Based Physical Unclonable Function With Multi-Response-Bits Per Cell

Highly Reliable Spin-Transfer Torque Magnetic RAM-Based Physical Unclonable Function With Multi-Response-Bits Per Cell

10.1109/TIFS.2015.2421481

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Bibliographic Details
Main Authors: Zhang, Le, Fong, Xuanyao, Chang, Chip-Hong, Kong, Zhi Hui, Roy, Kaushik
Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
Format: Article
Language:English
Published: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
Subjects:
Science & Technology
Technology
Computer Science, Theory & Methods
Engineering, Electrical & Electronic
Computer Science
Engineering
Automatic write-back
bit alteration
spin-transfer torque magnetic RAM (STT-MRAM) MemPUF
physical unclonable function
PHASE-CHANGE MEMORY
MRAM
PUFS
Online Access:https://scholarbank.nus.edu.sg/handle/10635/156179
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Institution: National University of Singapore
Language: English

Internet

https://scholarbank.nus.edu.sg/handle/10635/156179

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