Highly Reliable Spin-Transfer Torque Magnetic RAM-Based Physical Unclonable Function With Multi-Response-Bits Per Cell

Highly Reliable Spin-Transfer Torque Magnetic RAM-Based Physical Unclonable Function With Multi-Response-Bits Per Cell

10.1109/TIFS.2015.2421481

Saved in:

Bibliographic Details
Main Authors:	Zhang, Le, Fong, Xuanyao, Chang, Chip-Hong, Kong, Zhi Hui, Roy, Kaushik
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Format:	Article
Language:	English
Published:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
Subjects:	Science & Technology Technology Computer Science, Theory & Methods Engineering, Electrical & Electronic Computer Science Engineering Automatic write-back bit alteration spin-transfer torque magnetic RAM (STT-MRAM) MemPUF physical unclonable function PHASE-CHANGE MEMORY MRAM PUFS
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/156179
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore
Language:	English

Description
Summary:	10.1109/TIFS.2015.2421481